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BCP51-10资料

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SOT223 PNP SILICON PLANARMEDIUM POWER TRANSISTOR

ISSUE 3 󰂖 AUGUST 19957FEATURES

*Suitable for AF drivers and output stages*High collector current and Low VCE(sat)COMPLEMENTARY TYPE 󰂖 PARTMARKING DETAILS 󰂖

BCPBCP51

BCP51 󰂖 10BCP51 󰂖 16

C

BCP51ECB

ABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse CurrentContinuous Collector CurrentPower Dissipation at Tamb =25°COperating and Storage TemperatureRangePARAMETERCollector-BaseBreakdown Voltage Collector-EmitterBreakdown VoltageEmitter-BaseBreakdown VoltageCollector Cut-Off CurrentSYMBOLV(BR)CBOV(BR)CEOV(BR)EBOICBOMIN.-45-45-5-100-10-10-0.5-1.0402563100250100160125160250MHzSYMBOLVCBOVCEOVEBOICMICPtotTj:TstgVALUE-45-45-5-1.5-12-55 to +150UNITVVVAAW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).TYP.MAX.UNITVVVnACONDITIONS.IC=-100µAIC=- 10mA *IE=-10µAVCB=-30VVCB=-30V, Tamb=150°CVEB=-5VIC=-500mA, IB=-50mA*IC=-500mA, VCE=-2V*IC=-150mA, VCE=-2V*IC=-500mA, VCE=-2V*IC=-150mA, VCE=-2V*IC=-150mA, VCE=-2V*IC=-50mA, VCE=-10V,f=100MHzµAµAEmitter Cut-Off CurrentIEBOCollector-EmitterSaturation VoltageBase-Emitter Turn-OnVoltageVCE(sat)VBE(on)VVStatic Forward CurrenthFETransfer RatioBCP51-10BCP51-16Transition FrequencyfT*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%3 - 13

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