CAPACITOR STRUCTURE FOR AN INTEGRATED CIRCUIT

专利名称：CAPACITOR STRUCTURE FOR AN

INTEGRATED CIRCUIT

发明人：NG, Anthony, C., C.,SARAN, Mukul申请号：EP96901680.7申请日：19960214公开号：EP0813752B1公开日：20020502

摘要：A capacitor structure for an integrated circuit and a method of fabrication aredescribed. The capacitor structure is defined by layers forming interconnect metallizationand interlayer dielectrics. The latter are relatively thick, and provide high breakdownvoltages. Multilevel metallization schemes allow for a stack of a plurality of electrodesto be provided. The electrodes may take the form of stacks of flat plates interconnectedin parallel so that the capacitance is the sum of capacitances of alternate layers in thestack. Advantageously each electrode comprises a main portion (56, 60, 64, 68) and asurrounding portion (57, 61, 65, 69) having the form of a protecting ring (e.g. 57), coplanarwith the main portion of the electrode. The ring prevents thinning of the dielectric nearedges of electrode during fabrication, to improve control of breakdown voltages for highvoltage applications. Alternative electrode structures employing a plurality of

interconnected fingers, and particularly a configuration having interdigitated fingers, areprovided to increase the capacitance per unit surface area. Parallel electrode fingers arestacked in vertical alignment, or offset, and interconnected to provide vertical, horizontalor inclined stacks having different patterns of polarities, thereby forming capacitors ofvarious configurations. The capacitor structures have particular application for high

voltage (>100V), low leakage and high frequency (MHz/GHz) applications.

申请人：NORTEL NETWORKS LTD

地址：CA

国籍：CA

代理机构：Bewley, Ewan Stuart

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