概述
RTL8019AS采用100脚PQFP封装,其主要引角功能如下:
引角1-4,97-100:中断控制INT0-7;
引角33:复位控制;
引脚34:使能控制角AEN,低电平有效;
引脚6,7,70,:数字电源,+5V;
引脚14,28,83,86:数字地GND;
引脚47,57:模拟电源:+5V;
引脚44,52:模拟地;
引脚7-13,15,16,18-27:ISA地址总线;
引脚36-43,87,88,90-95:ISA数据总线;
引脚31:Boot ROM读操作控制;
引脚32:Boot ROM写操作控制;
引脚62:RX接收数据显示LED1脚;
引脚63:TX发送数据显示LED2脚;
引脚58,59:接收数据TP IN+/-;
引脚45,46:发送数据TP OUT+/-;
引脚50,51:外接晶体。
特性
产品种类: 单稳态多谐振荡器
逻辑系列: 74HC
逻辑类型: Dual Monostable Multivibrator
封装 / 箱体: SOT-109
传播延迟时间: 51 ns
最大功率耗散: 500 mW
最大工作温度: 125 C
最小工作温度: - 40 C
封装: Tube
安装风格: SMD/SMT
工作电源电压: 2 V to 6 V
参数
暂无74HC123D的参数信息
引脚图与功能
暂无74HC123D的引脚图与功能信息
1. General description
The 74HC123; 74HCT123 ar e hig h-sp eed Si-g ate CMOS d evices and ar e pin compatible
with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC
standard no. 7A.
The 74HC123; 74HCT123 are dual retriggerable monostable multivibrators with output
pulse width control by three methods:
1. The basic pulse is programmed by selection of an external resistor (R
EXT
) and
capacitor (C
EXT
).
2. Once triggered, the basic output pulse width may be extended retriggering the
gated active LOW- going edge input (nA
) or the active HIGH-going edge in put (nB). By
repeating this process, the ou tput pulse period ( nQ = HIGH, nQ
by
= LOW) can be made
as long as desired. Alternatively an output delay can be terminated at any time by a
LOW-going edge on input nRD
, which also inhibits the triggering.
3. An internal connection from nRD
to the input gates makes it possible to trigger the
circuit by a HIGH-going signal at input nRD
as shown in Table 3.
Schmitt-trigger action in the nA
and nB inputs, makes the circuit highly tolerant to slower
input rise and fall times.
The 74HC123; 74HCT123 are identical to the 74HC423; 74HCT423 but can be triggered
via the reset input.
2. Features and benefits
DC triggered from active HIGH or active LOW inputs
Retriggerable for very long pulses up to 100 % duty factor
Direct reset terminates output puls e
Schmitt-trigger action on all inputs except for the reset input
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Specified from 40 Cto+85C and from 40 Cto+125C
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