专利名称：Etchant Solutions and Method of Use
Thereof
发明人：Gene Everad Parris,William Jack Casteel,
JR.,Tianniu Rick Chen
申请号：US14978383申请日：20151222
公开号：US20160186058A1公开日：20160630
摘要：Etching compositions and method of using the etching compositions comprisingpotassium hydroxide; one or more than one additional alkaline compounds selected fromthe group consisting of TEAH, TMAF and NHOH; and water; or etching compositionscomprising one or more than one inorganic alkali basic hydroxides selected from thegroup consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidiumhydroxide, or lithium hydroxide; optionally one or more than one additional alkalinecompounds; water; and optionally one or more corrosion inhibitors; wherein thecomposition preferentially etches silicon present on a substrate as compared to silicondioxide present on said substrate.
申请人：Air Products and Chemicals, Inc.
地址：Allentown PA US
国籍：US
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