Inductor devices using substrate biasing technique

专利名称：Inductor devices using substrate biasing

technique

发明人：Hyun-Kyu Yu,Min Park,Cheon-Soo Kim,Kee-Soo Nam

申请号：US08/842869申请日：19970417公开号：US05952704A公开日：19990914

摘要：Inductors used for impedance matching in the radio frequency integratedcircuits is disclosed. In the integrated inductor device according to the present invention,an additional electrode is arranged in surroundings of an inductor metal line, and thereverse bias voltage is applied to the region between the substrate and the electrode soas to form a depletion layer. Therefore, the substrate biasing is effected and thus aninductor having improved performance can be formed by decreasing the parasitic

capacitance between the inductor metal line and the substrate. The present invention canalso be applied to another semiconductor device having metal lines and pads.

申请人：ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

代理机构：Cohen, Pontani, Lieberman & Pavane

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