Method for producing silicon single crystal

专利名称：Method for producing silicon single crystal发明人：Shuichi Inami,Kuniharu Inoue,Manabu

Moroishi,Tsuguya Fukagawa,NobuhiroKusaba

申请号：US1165申请日：20070904

公开号：US20080053370A1公开日：20080306

专利附图：

摘要：An aspect of the invention provides a silicon single crystal production method inwhich a dislocation-free feature can easily be achieved to enhance crystal quality

irrespective of a crystal orientation. In the silicon single crystal production method of theinvention, by a Czochralski method, in dipping the seed crystal in the melt, a melttemperature is set to an optimum temperature at which the seed crystal is brought intocontact with a melt surface, the melt temperature is lowered, the seed crystal is pulledup while a pulling rate of the seed crystal is increased, and the pulling rate is kept at aconstant rate to form the neck portion at the time that a pulling diameter reaches atarget neck diameter. The invention is suitable to the case in which a silicon single crystalhaving a crystal orientation <110> is pulled up using the seed crystal having the crystalorientation <110>.

申请人：Shuichi Inami,Kuniharu Inoue,Manabu Moroishi,Tsuguya Fukagawa,NobuhiroKusaba

地址：Tokyo JP,Tokyo JP,Tokyo JP,Tokyo JP,Tokyo JP

国籍：JP,JP,JP,JP,JP

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