AO4419资料

AO4419P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO4419 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4419 is Pb-free (meets ROHS & Sony 259 specifications). AO4419L is a Green Product ordering option. AO4419 and AO4419L are electrically identical.FeaturesVDS (V) = -30VID = -9.7 A (VGS = -10V)RDS(ON) < 20mΩ (VGS = -10V)RDS(ON) < 35mΩ (VGS = -4.5V)SOIC-8Top ViewSSSGDDDDD G S Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageVGSGate-Source VoltageContinuous Drain Current APulsed Drain Current BTA=25°CPower Dissipation AMaximum-30±20-9.7-8.1-4032.1-55 to 150UnitsVVATA=25°CTA=70°CIDIDMPDTJ, TSTGTA=70°CW°CJunction and Storage Temperature RangeThermal CharacteristicsParameter

Maximum Junction-to-Ambient AMaximum Junction-to-Ambient AMaximum Junction-to-Lead C

Symbol

t ≤ 10sSteady-StateSteady-State

RθJARθJLTyp316321Max407530Units°C/W°C/W°C/W

Alpha & Omega Semiconductor, Ltd.

元器件交易网www.cecb2b.com

AO4419

Electrical Characteristics (TJ=25°C unless otherwise noted)ParameterSymbol

STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)RDS(ON)gFSVSDIS

Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-7A

Forward Transconductance

VDS=-5V, ID=-9.7A

IS=-1A,VGS=0VDiode Forward Voltage

Maximum Body-Diode Continuous Current

ConditionsID=-250µA, VGS=0V VDS=-24V, VGS=0V

TJ=55°C

VDS=0V, VGS=±20VVDS=VGS ID=-250µAVGS=-10V, VDS=-5VVGS=-10V, ID=-9.7A

TJ=125°C

-1.4-40

1620.92621.7-0.7

-1-1.2

1573

VGS=0V, VDS=-15V, f=1MHzVGS=0V, VDS=0V, f=1MHz

3192116.726.4

VGS=-10V, VDS=-15V, ID=-9.7A

13.73.86.89.5

VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω

IF=-9.7A, dI/dt=100A/µs

844.222.225.214.1

31832171900202635

-2

Min-30

-1-5±100-2.7

Typ

Max

UnitsVµAnAVAmΩmΩSVApFpFpFΩnCnCnCnCnsnsnsnsnsnC

DYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRg

Reverse Transfer CapacitanceGate resistance

SWITCHING PARAMETERS

Qg(10V)Total Gate Charge (10V)Qg(4.5V)Total Gate Charge (4.5V)QgsQgdtD(on)trtD(off)tftrrQrr

Gate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery ChargeIF=-9.7A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 2 : May 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

元器件交易网www.cecb2b.com

AO4419

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS30-10V-5V25-4V20)A( D15-3.5VI-105VGS=-3V0012345-VDS (Volts)Fig 1: On-Region Characteristics3530)VGS=-4.5VΩm25( )N(OSD20R15VGS=-10V100510152025-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage6050ID=-9.7A40)Ωm( )N30(OS125°CDR201025°C0345678910-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.

3025VDS=-5V20)A(D15I-105125°C25°C011.522.533.544.55-VGS(Volts)Figure 2: Transfer Characteristics1.60ID=-9.7A1.40VGS=-10V1.20VGS=-4.5VID=-7A1.000.800255075100125150175Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1.0E+011.0E+001.0E-011.0E-02125°CS1.0E-031.0E-041.0E-0525°C1.0E-060.00.20.40.60.81.0-VSD (Volts)Figure 6: Body-Diode CharacteristicsNormalized On-Resistance-I (A)元器件交易网www.cecb2b.com

AO4419

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS108-VGS (Volts)64200481216202428-Qg (nC)Figure 7: Gate-Charge Characteristics2250VDS=-15VID=-9.7ACapacitance (pF)200017501500125010007505002500051015202530-VDS (Volts)Figure 8: Capacitance CharacteristicsCossCrssCiss100.0TJ(Max)=150°C, TA=25°CRDS(ON) limited0.1s4010µs100µs1ms10msPower (W)30TJ(Max)=150°CTA=25°C-ID (Amps)10.0201.01s10sDC100.10.11-VDS (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)1010000.0010.010.11101001000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA Normalized Transient Thermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=40°C/W1In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulsePD0.1TonSingle Pulse0.010.00001T0.00010.1110Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance0.0010.011001000Alpha & Omega Semiconductor, Ltd.