专利名称：Gate-induced strain for performance
improvement of a cmos semiconductorapparatus
发明人：Hoffmann, Thomas,Cea, Stephen,Giles,
Martin
申请号：EP10011429.7申请日：20031218公开号：EP2273547A2公开日：20110112
专利附图：
摘要：There is disclosed an apparatus including a substrate (105, 115) defining an
interior of the apparatus, a device exterior to the substrate including a gate electrode(130, 132), and a straining layer (213, 214) exterior to the gate electrode and exterior tothe substrate.
申请人：Intel Corporation
地址：2200 Mission College Blvd. M/S: RNB4-150 Santa Clara, CA 95052 US
国籍：US
代理机构：Goddar, Heinz J.
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