Semiconductor power component and a method of prod

专利名称：Semiconductor power component and a

method of producing same

发明人：Peter Flohrs,Robert Plikat,Wolfgang Feiler申请号：US10450222申请日：20030611

公开号：US20040021203A1公开日：20040205

专利附图：

摘要：A semiconductor power component and a method for producing asemiconductor power component, in particular a vertical NPT-IGBT for ignitionapplications with a breakdown voltage of less than approx. 1000 V. The semiconductor

power component includes a wafer substrate of a first conductive type including a rear-side emitter region of a second conductive type and a front-side drift region of the firstconductive type; a rear-side anode contact which is connected to the emitter region andextends partially to the front-side surface; a front-side MOS control structure; and afront-side cathode contact which is connected to a front-side source region and a bodyregion of the front-side MOS control structure. The thickness of the drift region is muchlarger than the width of the space charge region at a defined breakdown voltage; and thethickness of the rear-side emitter region is greater than 5 &mgr;m.

申请人：FLOHRS PETER,PLIKAT ROBERT,FEILER WOLFGANG

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