Integrated semiconductor circuit with capacitors o

专利名称：Integrated semiconductor circuit with

capacitors of precisely defined capacitanceand process for producing the circuit

发明人：Manfred Hain,Elisabeth Fischer申请号：US08/847867申请日：19970428公开号：US05844302A公开日：19981201

摘要：An integrated semiconductor circuit, such as an A/D converter, includes a firstzone having capacitors disposed therein. The capacitors have capacitor plates beingformed of a first conductive layer and a second conductive layer. A second zone hascircuit elements disposed therein. A planarizing layer and a cover layer insulate the firstand second conductive layers from one another in the second zone, except for a possibleperipheral region. A dielectric is formed only of the cover layer between the capacitorplates in the first zone, except for a possible peripheral region. A process for producingan integrated semiconductor circuit includes producing the first conductive layer;applying an insulating planarizing layer after producing the first conductive layer;

removing the planarizing layer in the first zone until a surface of the first conductive layeris exposed, except for a possible peripheral region; applying an insulating cover layerover the entire surface; and producing the second conductive layer.

申请人：SIEMENS AKTIENGESELLSCHAFT

代理人：Herbert L. Lerner,Laurence A. Greenberg

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