CMOS transistors and methods of forming same

专利名称：CMOS transistors and methods of forming

same

发明人：Haowen Bu,Brian Hornung,P.R.

Chidambaram,Amitabh Jain,Rajesh

Khamankar,Nandu Mahalingam,SrinivansanChakravarthi

申请号：US10810905申请日：20040326

公开号：US20050059260A1公开日：20050317

专利附图：

摘要：The present invention teaches the formation of CMOS transistors usinginterfacial nitrogen at the interface between the lightly doped extension regions and anoverlying insulating layer in combination with a capping layer of silicon nitride, both priorto the final source/drain anneal. Doses and energies may be increased for the P-channellightly-doped drain, source and drain regions. The resulting transistors exhibit desirablyhigh drive current and low off-state leakage current and overlap capacitance.

申请人：Haowen Bu,Brian Hornung,P.R. Chidambaram,Amitabh Jain,RajeshKhamankar,Nandu Mahalingam,Srinivansan Chakravarthi

地址：Plano TX US,Richardson TX US,Richardson TX US,Allen TX US,Coppell TXUS,Richardson TX US,Murphy TX US

国籍：US,US,US,US,US,US,US

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