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Method of making integrated MNOS and CMOS devices

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专利名称：Method of making integrated MNOS and

CMOS devices in a bulk silicon wafer

发明人：Yukun Hsia申请号：US06/356082申请日：19820308公开号：US0448A公开日：19840619

摘要：This combination process enables both MNOS and CMOS devices to befabricated upon the same wafer in very large scale integration systems. Conventionalmoat isolation techniques are replaced with low temperature ion implantation processingto accomplish substrate isolation. Both n and p channel MOS transistor diffusions andfield oxidations are processed concurrently. Also, this process utilizes bulk silicon wafermaterial rather than epitaxial wafer material as the substrate.

申请人：MCDONNELL DOUGLAS CORPORATION

代理人：Gregory A. Cone,George W. Finch,Donald L. Royer

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