Pattern forming process and process for preparing

专利名称：Pattern forming process and process for

preparing semiconductor device utilizingsaid pattern forming process

发明人：Takayuki Yagi,Toshiyuki Komatsu,Yasue

Sato,Shinichi Kawate

申请号：US08/013180申请日：19930129公开号：US05344522A公开日：19940906

摘要：A process for forming an etching pattern, which includes selectively irradiating alight to a clean surface of a material to be worked by etching so as to form radicals froma photoradical forming substance in an atmosphere of the substance, forming a modifiedportion having an etching resistance at a photo-irradiated portion of the surface, andthen subjecting an unmodified portion of the surface of the material to be worked to anetching treatment, thereby forming an etching pattern corresponding to a patternformed by the irradiation.

申请人：CANON KABUSHIKI KAISHA

代理机构：Fitzpatrick, Cella, Harper & Scinto

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