Method for forming a self-aligned contact of a sem

专利名称：Method for forming a self-aligned contact

of a semiconductor device and method formanufacturing a semiconductor device usingthe same

发明人：Seung-Mok Shin,Jae-Jong Han,Ki-Hyun

Hwang

申请号：US10348017申请日：20030122公开号：US06730570B2公开日：20040504

专利附图：

摘要：A method for forming a self-aligned contact in a semiconductor device whichcan reduce process failures and a method for manufacturing a semiconductor device thatincludes the self-aligned contact are provided. A self-aligned contact hole is formed in aninterlayer dielectric film to expose a portion of the substrate between conductivestructures formed thereon. A buffer layer is formed on a sidewall of the self-alignedcontact hole, on the bottom of the self-aligned contact hole, and on the interlayerdielectric film such that the thickness of the buffer layer at an upper portion of the self-aligned contact hole is greater than the thickness of the buffer layer at the bottom ofthe self-aligned contact hole. After removing the portion of the buffer layer on thebottom of the self-aligned contact hole, a contact is formed in the self-aligned contacthole to make contact with the substrate.

申请人：SAMSUNG ELECTRONICS CO., LTD.

代理机构：Harness, Dickey

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