专利名称：CLEANING METHOD AND FILM FORMING
METHOD
发明人：Mitsuhiro OKADA,Yutaka MOTOYAMA申请号：US16186921申请日：20181112
公开号：US20190144994A1公开日：20190516
专利附图：
摘要：There is provided a cleaning method of a film forming apparatus in which aprocess of forming a silicon film, a germanium film or a silicon germanium film on asubstrate mounted on a substrate holder in a processing container is performed,
comprising: etching away the silicon film, the germanium film or the silicon germaniumfilm adhered to an interior of the processing container including the substrate holder bysupplying a halogen-containing gas not containing fluorine into the processing containerin a state where the substrate holder, which was stored in a dew point-controlledatmosphere after the film forming process, is accommodated in the processing containerwith no substrate being mounted thereon.
申请人：TOKYO ELECTRON LIMITED
地址：Tokyo JP
国籍：JP
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